| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,280 pcs
|
1280 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics SCT10N120 is a high-performance N-Channel Silicon Carbide Field-Effect Transistor (SiCFET) designed for demanding power applications. It offers a robust 1200V drain-to-source voltage (Vdss) and a continuous drain current capability of 12A at a case temperature of 25°C.
Key electrical characteristics include a maximum on-state resistance (Rds On) of 690mOhm at 6A and 20V gate-source voltage, and a gate charge (Qg) of 22nC maximum. The device operates within a temperature range of -55°C to 200°C (TJ).
Packaged in a TO-247-3 through-hole configuration, the SCT10N120 is suitable for power switching and conversion circuits. Its SiCFET technology provides advantages in terms of efficiency and thermal performance compared to traditional silicon MOSFETs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V.
TO-247-3 (HiP247) with through-hole mounting.
-55°C to +200°C junction temperature.
690mΩ at Vgs=20V and Id=6A.
12A at case temperature.
22nC at Vgs=20V.
N-channel silicon carbide (SiCFET) MOSFET.