| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,600 pcs
|
12600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SCT1000N170 is an N-Channel Silicon Carbide (SiC) MOSFET manufactured by STMicroelectronics. It is designed for high-voltage switching applications requiring low on-resistance and high efficiency. The device offers a maximum drain-to-source voltage of 1700V and a continuous drain current of 7A at case temperature. The maximum on-resistance is 1.3Ohm at 3A drain current and 20V gate drive. The gate threshold voltage is 3.5V at 1mA drain current. The input capacitance is 133pF at 1000V drain-source voltage, and the total gate charge is 13.3nC at 20V gate voltage. These characteristics make it suitable for high-frequency switching and power conversion circuits. The device is housed in a HiP247™ package (TO-247-3) with through-hole mounting, allowing for efficient heat dissipation. The maximum power dissipation is 96W at case temperature, and the operating junction temperature range is -55°C to 200°C. This SiCFET is ideal for applications such as power supplies, inverters, and motor drives where high voltage and high efficiency are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1700V.
TO-247-3 (HiP247™).
-55°C to 200°C (junction).
13.3nC at Vgs=20V.
1.3Ohm at Id=3A, Vgs=20V.
3.5V at Id=1mA.
133pF at Vds=1000V.