| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics SCT040H65G3AG is an automotive-grade N-Channel Silicon Carbide Field Effect Transistor (FET). This device is designed for high-performance applications requiring robust power handling. It features a high drain-to-source voltage rating of 650V and can handle up to 30A of current (Tc).
The SCT040H65G3AG boasts a low on-resistance of 55mOhm at 20A and 18V, contributing to efficient power conversion. Its gate charge is 39.5nC (max) at 18V, with a gate-source voltage range of ±5V to +18V. The operating temperature range is -55°C to 175°C (TJ).
This FET is housed in a TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package, suitable for surface mount applications. The technology utilized is Silicon Carbide (SiC), offering superior thermal and electrical performance compared to traditional silicon-based devices. It is rated for 221W maximum power dissipation (Tc).
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted with low confidence and require verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
-55°C to 175°C junction temperature.
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA (H2PAK-7).
55 mOhm maximum at 20A and 18V gate drive.
39.5 nC maximum at 18V.
4.2V maximum at 1mA.
Silicon Carbide (SiC).