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2,220 pcs
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2220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This ROHM Semiconductor SCS220KE2HRC is a Silicon Carbide Schottky Diode Array designed for high-performance applications. It features a common cathode configuration with a maximum DC reverse voltage of 650V and an average rectified current of 10A per diode.
The forward voltage drop is a maximum of 1.55V at 10A, and the reverse leakage current is 200 µA at 600V. The diode operates at a junction temperature up to 175°C and has no recovery time above 500mA.
Packaged in a TO-247-3 through-hole configuration, this diode array is suitable for various power electronics designs. Its SiC Schottky technology offers advantages in efficiency and thermal performance.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted as unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum DC reverse voltage (Vr) for the SCS220KE2HRC is 650 V.
The average rectified current (Io) per diode is 10A (DC).
The maximum forward voltage (Vf) at 10A is 1.55 V.
The operating junction temperature is a maximum of 175°C.
This diode array uses SiC (Silicon Carbide) Schottky technology.
It is configured as a 1 Pair Common Cathode.
The package is TO-247-3 and it is a through-hole mounting type.