| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) |
This N-Channel MOSFET, part number SCH1430-TL-H from ON Semiconductor, is designed for switching applications. It offers a drain-source breakdown voltage of 20V and can handle a continuous drain current of up to 2A under typical conditions.
The device exhibits a maximum drain-source on-resistance (Rds On) of 125mOhm when measured at 1A drain current and 4.5V gate-source voltage. It operates with a gate-source voltage range of ±12V and requires drive voltages between 1.8V and 4.5V to achieve its specified Rds On.
With a power dissipation rating of 800mW (Ta), this MOSFET is suitable for various power management tasks. It is packaged in a compact SOT-563 surface-mount case and operates within a temperature range of -55°C to 150°C (TJ).
The SCH1430-TL-H utilizes Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology. It is supplied on a reel with a factory pack quantity of 5000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage (Vds) is 20V.
The continuous drain current (Id) is 2A.
The maximum Rds On is 125mOhm at 1A, 4.5V.
The operating temperature range is 150°C (TJ).
The SCH1430-TL-H is supplied in a SOT-563, SOT-666 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.