SBSP52T1G The ON Semiconductor SBSP52T1G is an NPN small-signal Darlington transistor designed for switching applications. It features an 80V collector-emitter voltage and 1A collector current.
Mfr Part #:

SBSP52T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SBSP52T1G is an NPN small-signal Darlington transistor designed for switching applications. It features an 80V collector-emitter voltage and 1A collector current.
Total Stock: 67,500 pcs
$ Price Range: $0.99

SBSP52T1G Available from 1 distributor

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SBSP52T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Minimum @ IC=100 μA, IE=0)
Breakdown Voltage (Minimum @ IE = -10 A, IC = 0)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Maximum Temperature for Soldering Purposes
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TA = 25 °C, Note 2)
Supplier Device Package
Thermal Resistance (Typical @ Junction to Ambient (Note 2)
Thermal Resistance (Typical @ Junction-to-Ambient (Note 1)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SBSP52T1G Description

Short technical summary and product information.

The ON Semiconductor SBSP52T1G is an NPN small-signal Darlington transistor designed for use in switching applications such as print hammer, relay, solenoid, and lamp drivers. This device is housed in the SOT-223 package, suitable for medium power surface mount applications.

 

Key electrical specifications include a collector-emitter voltage of 80V, a collector-base voltage of 90V, and an emitter-base voltage of 5.0V. The maximum collector current is 1A, with a DC current gain (hFE) of 2000 at 500mA and 10V. The Vce saturation is a maximum of 1.3V at 500µA and 500mA.

 

Thermal characteristics include a junction-to-ambient thermal resistance of 156 °C/W when mounted on a minimum recommended footprint and 100 °C/W when mounted on a 1 cm² pad. The operating and storage temperature range is from -65°C to 150°C. The maximum temperature for soldering purposes is 260°C for 10 seconds.

 

The SOT-223 package is designed for medium power surface mount applications and can be soldered using wave or reflow methods. The formed leads absorb thermal stress during soldering. This device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. The 'S' prefix indicates AEC-Q101 qualification and PPAP capability for automotive and other demanding applications.

SBSP52T1G Quick Information

Product Type: NPN Darlington Transistor
Canonical Name: NPN Small-Signal Darlington Transistor
Subcategory: Bipolar (BJT) - Single

SBSP52T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

SBSP52T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SBSP52T1G Features

  • NPN Darlington transistor for switching applications.
  • 80V collector-emitter voltage rating.
  • 1A maximum collector current.
  • High DC current gain of 2000.
  • SOT-223 surface mount package.

SBSP52T1G Applications

  • Designed for print hammer drivers.
  • Suitable for relay drivers.
  • Used for solenoid drivers.
  • Ideal for lamp drivers.

SBSP52T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SBSP52T1G?

The maximum collector-emitter voltage (VCEO) is 80 V.

What package is the SBSP52T1G available in?

The SBSP52T1G is available in a SOT-223 (TO-261) surface mount package.

What is the operating temperature range of the SBSP52T1G?

The operating junction temperature range is -65°C to 150°C.

What is the minimum DC current gain of the SBSP52T1G?

The minimum DC current gain (hFE) is 2000 at 500 mA collector current and 10 V collector-emitter voltage.

What is the saturation voltage of the SBSP52T1G?

The maximum collector-emitter saturation voltage is 1.3 V at a base current of 500 µA and collector current of 500 mA.

What is the mounting type of the SBSP52T1G?

The SBSP52T1G is a surface mount device.

What is the power dissipation of the SBSP52T1G?

The maximum power dissipation is 800 mW when mounted on a FR-4 PCB with minimum footprint, and 1.25 W with a 1 cm² pad.

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