| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
482,950 pcs
|
482950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Halogen Free | |
| Mounting Type | |
| Noise Figure | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SBCW33LT1G from On Semiconductor is a general-purpose NPN silicon transistor. It is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a maximum collector-emitter voltage of 32V and a continuous collector current of 100mA. The DC current gain (hFE) ranges from 420 to 800 at 2mA collector current and 5V VCE. The collector-emitter saturation voltage is a maximum of 250mV at 10mA collector current and 500µA base current.
Thermal performance is supported by a total device dissipation of up to 300mW on an alumina substrate at 25°C. The operating and storage temperature range is from -55°C to +150°C.
This device is Pb-free and Halogen-free, aligning with environmental compliance standards. It is supplied in tape and reel packaging with 3,000 units per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the SBCW33LT1G is 32 Vdc.
The SBCW33LT1G has a continuous collector current rating of 100 mAdc.
The DC current gain (hFE) for the SBCW33LT1G is between 420 and 800 when measured at 2mA collector current and 5V VCE.
The SBCW33LT1G is supplied in a SOT-23-3 (TO-236) package.
The SBCW33LT1G can operate within a temperature range of -55°C to +150°C.