SBCW33LT1G The On Semiconductor SBCW33LT1G is an NPN silicon transistor designed for general-purpose applications. It features a 32V collector-emitter voltage and a 100mA continuous collector current.
Mfr Part #:

SBCW33LT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SBCW33LT1G is an NPN silicon transistor designed for general-purpose applications. It features a 32V collector-emitter voltage and a 100mA continuous collector current.
✓ Total Stock: 482,950 pcs
$ Price Range: $0.99

SBCW33LT1G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
482,950 pcs
482950 pcs On Request 1 On Request On Request On Request On Request On Request

SBCW33LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Halogen Free
Mounting Type
Noise Figure
Operating Temperature
Power
SVHC Present
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SBCW33LT1G Description

Short technical summary and product information.

The SBCW33LT1G from On Semiconductor is a general-purpose NPN silicon transistor. It is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs.

 

Key electrical characteristics include a maximum collector-emitter voltage of 32V and a continuous collector current of 100mA. The DC current gain (hFE) ranges from 420 to 800 at 2mA collector current and 5V VCE. The collector-emitter saturation voltage is a maximum of 250mV at 10mA collector current and 500µA base current.

 

Thermal performance is supported by a total device dissipation of up to 300mW on an alumina substrate at 25°C. The operating and storage temperature range is from -55°C to +150°C.

 

This device is Pb-free and Halogen-free, aligning with environmental compliance standards. It is supplied in tape and reel packaging with 3,000 units per reel.

SBCW33LT1G Quick Information

Product Type: NPN Silicon Transistor
Series: BCW33
Canonical Name: SBCW33LT1G NPN Silicon General Purpose Transistor
Subcategory: Single

SBCW33LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SBCW33LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SBCW33LT1G Features

  • NPN silicon general purpose transistor.
  • 32V collector-emitter breakdown voltage.
  • 100mA continuous collector current.
  • SOT-23-3 surface mount package.
  • Pb-free and Halogen-free.

SBCW33LT1G Applications

  • Used in low-voltage signal amplification circuits.
  • Ideal for general-purpose switching applications.
  • Suitable for driver stages in consumer electronics.
  • Applied in battery-powered portable device designs.
  • Utilized in temperature-compensated oscillator circuits.

SBCW33LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the SBCW33LT1G?

The maximum collector-emitter voltage (VCEO) for the SBCW33LT1G is 32 Vdc.

What is the continuous collector current rating of the SBCW33LT1G transistor?

The SBCW33LT1G has a continuous collector current rating of 100 mAdc.

What is the DC current gain (hFE) range for the SBCW33LT1G?

The DC current gain (hFE) for the SBCW33LT1G is between 420 and 800 when measured at 2mA collector current and 5V VCE.

What is the package type for the SBCW33LT1G transistor?

The SBCW33LT1G is supplied in a SOT-23-3 (TO-236) package.

What is the operating temperature range of the SBCW33LT1G?

The SBCW33LT1G can operate within a temperature range of -55°C to +150°C.

Home

Categories