SBCP56T1G The ON Semiconductor SBCP56T1G is an NPN Silicon Epitaxial transistor designed for audio amplifier applications. It features a high current rating of 1A and is housed in a SOT-223 surface mount package.
Mfr Part #:

SBCP56T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SBCP56T1G is an NPN Silicon Epitaxial transistor designed for audio amplifier applications. It features a high current rating of 1A and is housed in a SOT-223 surface mount package.
Total Stock: 9,000 pcs
$ Price Range: $0.99

SBCP56T1G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
8,000 pcs
8000 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

SBCP56T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Minimum @ IC = -100 µAdc, IE = 0)
Breakdown Voltage (Minimum @ IC = 1.0 mAdc, IB = 0)
Breakdown Voltage (Minimum @ IE = 10 μAdc, IC = 0)
Collector Current - Peak
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Leakage Current (Maximum @ VCB = 30 Vdc, IE = 0)
Maximum Temperature for Soldering Purposes
Mounting Type
Operating Temperature
Power
Power Dissipation
SVHC Present
Supplier Device Package
Thermal Resistance Junction-to-Ambient
Time in Solder Bath
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SBCP56T1G Description

Short technical summary and product information.

The ON Semiconductor SBCP56T1G is an NPN Silicon Epitaxial transistor designed for use in audio amplifier applications. This device offers a maximum collector-emitter voltage of 80V and a continuous collector current of 1A, with a peak current capability of 2A.

 

It is housed in the SOT-223 package, which is suitable for medium power surface mount applications. The SOT-223 package can be soldered using wave or reflow methods, with formed leads designed to absorb thermal stress. The operating temperature range is -65°C to 150°C.

 

Key electrical characteristics include a DC current gain (hFE) of 40 at 150mA and 2V, and a Vce saturation of 500mV at 50mA and 500mA. The transistor operates at frequencies up to 130MHz.

 

This component is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. Its PNP complement is the BCP53T1G.

SBCP56T1G Quick Information

Product Type: NPN Silicon Epitaxial Transistor
Series: BCP56
Canonical Name: SBCP56T1G NPN Silicon Epitaxial Transistor
Subcategory: Bipolar (BJT) - Single

SBCP56T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free

SBCP56T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SBCP56T1G Features

  • NPN Silicon Epitaxial transistor for audio amplifiers.
  • High current rating of 1A continuous.
  • 80V collector-emitter voltage rating.
  • SOT-223 surface mount package.
  • Pb-Free and Halogen Free.

SBCP56T1G Applications

  • Switches loads up to 1 A.
  • Use in 80 V DC-DC converters.
  • Suitable for surface-mount power boards.
  • Signal amplification in low-power circuits.

SBCP56T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SBCP56T1G?

The maximum collector-emitter voltage is 80 Vdc.

What is the maximum collector current rating?

The maximum continuous collector current is 1 A, with a peak rating of 2 A.

What is the operating temperature range?

The operating and storage temperature range is -65°C to 150°C.

What package is the SBCP56T1G available in?

It is available in a TO-261-4 (SOT-223) surface-mount package.

What is the DC current gain (hFE) of the SBCP56T1G?

The minimum DC current gain is 40 at a collector current of 150 mA and collector-emitter voltage of 2 V.

What is the power dissipation rating?

The total power dissipation is 1.5 W at 25°C ambient, derating at 12 mW/°C above 25°C.

What is the transition frequency of the SBCP56T1G?

The minimum transition frequency is 130 MHz.

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