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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
265,020 pcs
|
265020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
63,000 pcs
$0.20
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63000 pcs |
$0.20
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1 | On Request | On Request | On Request | On Request | On Request | |||||||||
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1,259 pcs
|
1259 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current - Continuous | |
| Collector Current - Peak | |
| Collector Cutoff Current | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| Halogen Free | |
| Junction and Storage Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| SVHC Present | |
| Supplier Device Package | |
| Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate) | |
| Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board) | |
| Total Device Dissipation (Maximum @ Alumina Substrate, TA = 25 °C) | |
| Total Device Dissipation (Maximum @ FR -5 Board, TA = 25 °C) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The SBC857BLT1G from On Semiconductor is a PNP silicon transistor suitable for various general-purpose applications. It offers a maximum collector-emitter voltage (Vceo) of -30V and a continuous collector current (Ic) of 100mA. The device has a power dissipation rating of 300mW and operates within a temperature range of -55°C to 150°C.
Packaged in a compact SOT-23-3 (TO-236-3) surface-mount case, the SBC857BLT1G is designed for easy integration into printed circuit boards. Its typical DC current gain (hFE) is 220 at 2mA collector current and 5V collector-emitter voltage. The transistor also exhibits a Vce saturation of 650mV at 5mA base current and 100mA collector current.
This component is Pb-free and Halogen-free, aligning with environmental compliance standards. It is well-suited for applications requiring a reliable PNP transistor in a small form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It is available in SOT-23-3 (TO-236-3, SC-59) surface mount package.
The operating junction temperature range is -55°C to +150°C.
The maximum collector-emitter voltage is -30V.
The maximum continuous collector current is 100mA.
Minimum DC current gain is 220 at IC=2mA, VCE=5V.
The typical transition frequency is 100 MHz.
Maximum power dissipation is 225mW on FR-5 board and 300mW on alumina substrate at 25°C ambient.