| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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51,000 pcs
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51000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The SBC857BDW1T1G from On Semiconductor is a dual PNP bipolar junction transistor (BJT) array. It is designed for general-purpose amplifier applications and housed in a compact SOT-363/SC-88 surface-mount package.
Key electrical specifications include a collector-emitter breakdown voltage of 45V and a continuous collector current of 100mA. The device offers a minimum DC current gain (hFE) of 220 at 2mA and 5V. It operates at frequencies up to 100MHz and has a maximum power dissipation of 380mW.
The operating temperature range for this transistor array is -55°C to 150°C (TJ). The package is a 6-TSSOP, SC-88, SOT-363, suitable for low-power surface-mount applications. The device is RoHS compliant and lead-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is -45V.
The continuous collector current rating is -100mA.
It is available in an SC-88/SC70-6/SOT-363 surface-mount package.
The operating junction and storage temperature range is -55°C to +150°C.
The total device dissipation is 380mW per device at 25°C ambient temperature.