SBC857ALT1G The ON Semiconductor SBC857ALT1G is a PNP bipolar junction transistor designed for general-purpose applications. It offers a 45V collector-emitter voltage and 100mA continuous current in a compact SOT-23-3 package.
Mfr Part #:

SBC857ALT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SBC857ALT1G is a PNP bipolar junction transistor designed for general-purpose applications. It offers a 45V collector-emitter voltage and 100mA continuous current in a compact SOT-23-3 package.
Total Stock: 48,000 pcs
$ Price Range: $0.99

SBC857ALT1G Available from 1 distributor

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SBC857ALT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage
Frequency
Halogen Free
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SBC857ALT1G Description

Short technical summary and product information.

The ON Semiconductor SBC857ALT1G is a PNP silicon bipolar junction transistor (BJT) suitable for various general-purpose applications. This device features a maximum collector-emitter voltage of 45V and a continuous collector current rating of 100mA.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 125 at 2mA and 5V, and a Vce saturation of 650mV at 5mA and 100mA. The transistor operates at frequencies up to 100MHz and has a power dissipation of 300mW at 25°C.

 

Designed for surface mounting, the SBC857ALT1G comes in a TO-236-3, SC-59, SOT-23-3 package. It operates within a temperature range of -55°C to 150°C (TJ). The device is noted as RoHS3 Compliant, Pb-Free, and Halogen Free.

 

This transistor is a reliable component for signal amplification and switching circuits where a PNP type is required. Its small package size makes it suitable for space-constrained designs.

SBC857ALT1G Quick Information

Product Type: Bipolar Junction Transistor
Series: BC856ALT1G Series
Canonical Name: PNP Bipolar Junction Transistor
Subcategory: PNP

SBC857ALT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SBC857ALT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SBC857ALT1G Features

  • PNP silicon bipolar junction transistor.
  • 45V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Surface mount SOT-23-3 package.
  • RoHS3 Compliant and Pb-Free.

SBC857ALT1G Applications

  • General purpose signal amplification.
  • Low power switching applications.
  • Compact electronic circuits.
  • Prototyping and design projects.

SBC857ALT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the SBC857ALT1G?

The maximum collector-emitter voltage for the SBC857ALT1G is 45V.

What is the continuous collector current of the SBC857ALT1G?

The continuous collector current for the SBC857ALT1G is 100mA.

What is the package type for the SBC857ALT1G transistor?

The SBC857ALT1G transistor is supplied in a SOT-23-3 package.

What is the operating temperature range for the SBC857ALT1G?

The operating temperature range for the SBC857ALT1G is -55°C to 150°C (TJ).

Is the SBC857ALT1G RoHS compliant?

The SBC857ALT1G is RoHS3 Compliant.

What is the minimum DC current gain (hFE) for the SBC857ALT1G?

The minimum DC current gain (hFE) for the SBC857ALT1G is 125 at 2mA and 5V.

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