| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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55,020 pcs
|
55020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,606 pcs
|
1606 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SBC856BLT1G from ON Semiconductor is a PNP silicon bipolar junction transistor. It is designed for general-purpose applications and comes in a compact SOT-23-3 surface mount package.
Key electrical characteristics include a maximum collector-emitter voltage of 65V and a continuous collector current of 100mA. The transistor offers a DC current gain (hFE) of 220 minimum at 2mA collector current and 5V Vce. Its transition frequency (fT) is 100MHz, making it suitable for various signal processing tasks.
The device operates within a wide temperature range of -55°C to 150°C. It is housed in a TO-236-3, SC-59, SOT-23-3 package, facilitating surface mounting on PCBs. The maximum power dissipation is rated at 300mW when mounted on an alumina substrate at 25°C.
This transistor is Pb-free and Halogen-free, aligning with environmental compliance standards. Its small size and robust specifications make it a versatile component for electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30V
-100mA
-55°C to 150°C
TO-236-3, SC-59, SOT-23-3 (surface mount)
Minimum 220 at IC=2mA, VCE=5V
300mW on alumina substrate at 25°C ambient
Typically 100MHz