| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,700 pcs
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7700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SBC856BDW1T3G from On Semiconductor is a dual PNP transistor designed for general-purpose amplification. It is housed in the SOT-363/SC-88 surface-mount package, making it suitable for low-power applications.
Key electrical characteristics include a collector-emitter breakdown voltage of up to 65V, a continuous collector current of 100mA, and a peak collector current of 200mA. The device offers a DC current gain (hFE) of at least 220 at 2mA/5V and a transition frequency of 100MHz. The operating temperature range is from -55°C to +150°C.
This series is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. The S prefix indicates suitability for automotive applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
Designed for surface mounting, the SOT-363 package is ideal for space-constrained designs. The transistor is suitable for various general-purpose amplifier applications where dual PNP configuration is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The SBC856BDW1T3G has a maximum collector-emitter breakdown voltage of 65V.
It is supplied in a 6-TSSOP, SC-88, or SOT-363 surface-mount package.
The device supports a junction and storage temperature range from -55°C to +150°C.
The component handles a maximum continuous collector current of 100mA.
Total device dissipation is rated at 380mW at 25°C ambient temperature.
The minimum DC current gain (hFE) is 220 when tested at 2mA collector current and 5V collector-emitter voltage.