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SBC856BDW1T1G The On Semiconductor SBC856BDW1T1G is a dual PNP bipolar transistor designed for general purpose amplifier applications. It features a 65V collector-emitter voltage and a 100mA continuous collector current.
Mfr Part #:

SBC856BDW1T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SBC856BDW1T1G is a dual PNP bipolar transistor designed for general purpose amplifier applications. It features a 65V collector-emitter voltage and a 100mA continuous collector current.
✓ Total Stock: 100,000 pcs
$ Price Range: $0.99

SBC856BDW1T1G Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
99,000 pcs
On Request
99000 pcs On Request 1 On Request On Request 20+ On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
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SBC856BDW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SBC856BDW1T1G Description

Short technical summary and product information.

The SBC856BDW1T1G from On Semiconductor is a dual PNP transistor designed for general-purpose amplifier applications. It is housed in a compact SOT-363/SC-88 package, making it suitable for low-power surface mount applications.

 

Key electrical characteristics include a maximum collector-emitter voltage of 65V and a continuous collector current of 100mA. The device operates over a wide temperature range from -55°C to 150°C. It also offers a DC current gain (hFE) of 220 minimum at 2mA and 5V, with a Vce saturation of 650mV maximum at 5mA and 100mA.

 

This transistor series is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant. The S prefix indicates suitability for automotive applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.

 

Mounting is via surface mount technology. The package is a 6-TSSOP, SC-88, SOT-363.

SBC856BDW1T1G Quick Information

Product Type: Dual General Purpose Transistor
Canonical Name: SBC856BDW1T1G PNP Dual Transistor
Subcategory: Bipolar (BJT) - Arrays

SBC856BDW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SBC856BDW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SBC856BDW1T1G Features

  • Dual PNP transistor for general applications.
  • 65V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Surface mount SC-88/SOT-363 package.
  • Wide operating temperature range.

SBC856BDW1T1G Applications

  • Suitable for general amplifier circuits.
  • Low power surface mount designs.
  • Automotive applications possible.
  • General purpose signal amplification.

SBC856BDW1T1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SBC856BDW1T1G?

The maximum collector-emitter voltage is -65V.

What is the continuous collector current rating?

The continuous collector current rating is -100mA.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C.

What package does the SBC856BDW1T1G come in?

It comes in an SC-88/SC70-6/SOT-363 surface-mount package.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 220 at 2mA collector current and 5V collector-emitter voltage.

What is the maximum power dissipation?

The maximum power dissipation is 380mW per device at 25°C ambient temperature.

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