| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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46,020 pcs
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46020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SBC848BLT1G from ON Semiconductor is an NPN silicon bipolar junction transistor (BJT) suitable for various electronic applications. It features a maximum collector-emitter voltage (VCEO) of 30V and a continuous collector current (IC) of 100mA.
This transistor operates with a maximum power dissipation of 300mW and has a transition frequency (fT) of 100MHz. It is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it ideal for space-constrained designs.
The device operates across a wide temperature range from -55°C to +150°C. It is specified with a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 600mV at 5mA base current and 100mA collector current.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status. The datasheet also confirms Pb-Free and Halogen Free characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 30 Vdc.
The SBC848BLT1G is packaged in a SOT-23-3 (TO-236) surface-mount package.
The junction and storage temperature range is -55°C to +150°C.
The minimum hFE is 200 at Ic=2mA and Vce=5V.
The transition frequency (fT) is 100 MHz.
The maximum Vce(sat) is 600 mV at Ib=5mA and Ic=100mA.
Yes, the SBC848BLT1G is Pb-free as verified in the datasheet.