SBC847CWT1G The On Semiconductor SBC847CWT1G is an NPN bipolar transistor designed for general purpose amplifier applications. It features a 45V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

SBC847CWT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SBC847CWT1G is an NPN bipolar transistor designed for general purpose amplifier applications. It features a 45V collector-emitter voltage and 100mA continuous collector current.
Total Stock: 5,408 pcs
$ Price Range: $0.99

SBC847CWT1G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,968 pcs
2968 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
2,440 pcs
2440 pcs On Request 1 On Request On Request On Request On Request On Request

SBC847CWT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current (Max)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Power - Max
Supplier Device Package
Tape/Reel Status
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SBC847CWT1G Description

Short technical summary and product information.

The On Semiconductor SBC847CWT1G is an NPN silicon bipolar transistor housed in a compact SC-70-3 (SOT323) surface-mount package. This device is suitable for general purpose amplifier applications and offers a collector-emitter voltage of 45V and a continuous collector current of 100mA.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 420 at 2mA and 5V, and a maximum Vce saturation of 600mV at 5mA and 100mA. The transistor operates over a wide temperature range of -55°C to 150°C (TJ) and has a transition frequency of 100MHz.

 

This component is Pb-Free and Halogen Free, complying with RoHS standards. Its surface-mount package makes it ideal for low-power, space-constrained applications. The AEC-Q101 qualification indicates suitability for automotive and other demanding applications requiring unique site and control change requirements.

SBC847CWT1G Quick Information

Product Type: Bipolar Transistor
Series: Automotive, AEC-Q101
Canonical Name: NPN Bipolar Transistor
Subcategory: NPN

SBC847CWT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

SBC847CWT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SBC847CWT1G Features

  • NPN bipolar transistor for general applications.
  • 45V collector-emitter breakdown voltage.
  • 100mA continuous collector current.
  • 100MHz transition frequency.
  • SC-70-3 (SOT323) surface mount package.

SBC847CWT1G Applications

  • General-purpose switching and amplification.
  • Low-power signal processing circuits.
  • Driver stages in portable electronics.
  • Signal conditioning in sensor interfaces.

SBC847CWT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SBC847CWT1G?

45V.

What is the maximum continuous collector current?

100mA.

What is the transition frequency of this transistor?

100MHz.

What is the maximum power dissipation?

150mW.

What is the operating temperature range?

-55°C to 150°C.

What package does the SBC847CWT1G come in?

SC-70-3 (SOT-323) surface-mount package.

What is the minimum DC current gain (hFE)?

420 at 2mA collector current and 5V collector-emitter voltage.

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