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SBC847CDXV6T1G The ON Semiconductor SBC847CDXV6T1G is a dual NPN bipolar junction transistor array designed for general purpose amplifier applications. It is housed in a compact SOT-563 surface mount package.
Mfr Part #:

SBC847CDXV6T1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SBC847CDXV6T1G is a dual NPN bipolar junction transistor array designed for general purpose amplifier applications. It is housed in a compact SOT-563 surface mount package.
✓ Total Stock: 221,020 pcs
$ Price Range: $0.99

SBC847CDXV6T1G Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
204,000 pcs
On Request
204000 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
17,020 pcs
On Request
17020 pcs On Request 1 On Request On Request On Request On Request On Request
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SBC847CDXV6T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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SBC847CDXV6T1G Description

Short technical summary and product information.

The SBC847CDXV6T1G from ON Semiconductor is a dual NPN bipolar junction transistor (BJT) array designed for general-purpose amplification. This device features a collector-emitter voltage (VCEO) of 45V and a continuous collector current (IC) of 100mA. It offers a typical DC current gain (hFE) of 420 at 2mA collector current and 5V VCE, with a transition frequency (fT) of 100MHz.

 

The transistor array is housed in a SOT-563 surface mount package, making it suitable for low-power applications where space is a constraint. The operating temperature range is -55°C to 150°C (TJ). The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive and other demanding applications. It is also a Pb-free device.

 

Key electrical characteristics include a collector-emitter saturation voltage (VCE(sat)) of 600mV at 5mA base current and 100mA collector current. The collector cutoff current (ICBO) is a maximum of 15nA at 30V VCB. These specifications make the SBC847CDXV6T1G a versatile component for various amplifier and switching circuits.

SBC847CDXV6T1G Quick Information

Product Type: Bipolar Transistor (BJT)
Canonical Name: SBC847CDXV6T1G NPN Dual General Purpose Transistor
Subcategory: BJT Arrays

SBC847CDXV6T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SBC847CDXV6T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SBC847CDXV6T1G Features

  • Dual NPN bipolar junction transistor array.
  • Designed for general purpose amplifier applications.
  • Compact SOT-563 surface mount package.
  • AEC-Q101 qualified and PPAP capable.
  • Pb-free device.

SBC847CDXV6T1G Applications

  • Dual NPN for general-purpose amplification
  • Suitable for low power surface mount designs
  • Used in automotive control modules (AEC-Q101)
  • Designed for amplifier circuit applications

SBC847CDXV6T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the SBC847CDXV6T1G?

45V minimum (test condition IC=10mA).

What is the package type?

SOT-563 surface-mount package.

What is the operating temperature range?

-55°C to 150°C.

What is the maximum collector current?

100mA continuous.

What is the typical DC current gain (hFE)?

420 at 2mA collector current and 5V VCE.

What is the collector-emitter saturation voltage?

600mV maximum at 100mA collector current and 5mA base current.

What is the transition frequency?

100MHz.

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