SBC847BWT1G The ON Semiconductor SBC847BWT1G is an NPN bipolar transistor designed for general purpose amplifier applications. It features a 45V collector-emitter voltage and a 100mA continuous collector current.
Mfr Part #:

SBC847BWT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SBC847BWT1G is an NPN bipolar transistor designed for general purpose amplifier applications. It features a 45V collector-emitter voltage and a 100mA continuous collector current.
Total Stock: 335,691 pcs
$ Price Range: $0.99

SBC847BWT1G Available from 2 distributors

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247,671 pcs
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88,020 pcs
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SBC847BWT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector - Emitter Saturation Voltage
Collector Cutoff Current
Collector Emitter Breakdown Voltage (Minimum @ IC = -10 mA)
Collector Emitter Breakdown Voltage (Minimum @ IC = 10 /C 0109 A, VEB = 0)
Collector-Base Breakdown Voltage
Collector-Base Voltage
Current
DC Current Gain (Minimum/Maximum @ 2 mA @ 5 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage
Emitter-Base Voltage
Frequency
Halogen Free
Junction and Storage Temperature
Mounting Type
Operating Temperature
Pb-Free
Power
Supplier Device Package
Supplier Package
Thermal Resistance Junction-to-Ambient
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SBC847BWT1G Description

Short technical summary and product information.

The ON Semiconductor SBC847BWT1G is an NPN silicon transistor designed for general-purpose amplifier applications. It is housed in a compact SC-70/SOT-323 surface-mount package, making it suitable for low-power applications.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 45V and a continuous collector current (IC) of 100mA. The device offers a minimum DC current gain (hFE) of 200 at 2mA and 5V, with a typical saturation voltage (VCE(sat)) of 600mV at 5mA collector current and 100mA base current. It operates at frequencies up to 100MHz.

 

This transistor is specified for operation across a wide temperature range from -55°C to 150°C. The datasheet indicates a total power dissipation of 200 mW on an FR-5 board at 25°C, with a thermal resistance of 620°C/W.

 

The SBC847BWT1G is Pb-free and Halogen-free, compliant with RoHS standards. It is qualified for automotive and other applications requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable.

SBC847BWT1G Quick Information

Product Type: NPN Transistor
Canonical Name: NPN Silicon Transistor
Subcategory: BJT

SBC847BWT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SBC847BWT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SBC847BWT1G Features

  • NPN bipolar junction transistor with 45V Vce rating.
  • Continuous collector current up to 100mA.
  • High DC current gain of 200 to 450.
  • Transition frequency of 100 MHz typical.
  • Surface mount SOT-323-3 package.

SBC847BWT1G Applications

  • Suitable for general purpose switching and amplification.
  • Ideal for low power consumer electronics designs.
  • Used in portable devices where space is limited.

SBC847BWT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the SBC847BWT1G?

The operating junction temperature range is -55°C to 150°C.

What is the package type for the SBC847BWT1G?

The SBC847BWT1G is offered in the SOT-323-3 surface mount package, also known as SC-88/SC70-6.

Is the SBC847BWT1G lead-free and halogen free?

Yes, the SBC847BWT1G is lead-free (Pb-Free) and halogen free per the datasheet.

What is the collector-emitter breakdown voltage of the SBC847BWT1G?

The minimum collector-emitter breakdown voltage is 45V at 10mA collector current.

What is the DC current gain range of the SBC847BWT1G?

The DC current gain (hFE) ranges from 200 to 450 at 2mA collector current and 5V Vce.

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