| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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16,440 pcs
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16440 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor SBC847BPDW1T3G is a versatile dual general-purpose transistor array featuring complementary NPN and PNP transistors. Designed for low power surface mount applications, it is housed in the SOT-363 (SC-88) package.
This device offers a collector-emitter voltage rating of 45V for the NPN transistor and -65V for the PNP transistor. It supports a continuous collector current of 100mA for NPN and -100mA for PNP, with a peak current capability of 200mA. The DC current gain (hFE) is a minimum of 200 at 2mA collector current and 5V Vce. The operating temperature range is from -55°C to 150°C.
The SBC847BPDW1T3G is suitable for various amplifier applications. Its surface mount package and complementary transistor configuration make it a convenient choice for space-constrained designs. The device is RoHS3 compliant, Pb-free, and halogen-free, aligning with modern environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.01 | $0.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the NPN transistor is 65V.
The continuous collector current is 100mA for both NPN and PNP transistors.
The operating junction temperature range is -55°C to 150°C.
The device is available in an SC-88/SC70-6/SOT-363 surface-mount package.
The typical transition frequency is 100MHz.
The minimum DC current gain (hFE) is 200 at Vce = 5V and Ic = 2mA.