| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
96,000 pcs
|
96000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
70,020 pcs
|
70020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,480 pcs
|
1480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Supplier Device Package | |
| Thermal Resistance | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The ON Semiconductor SBC847BDW1T1G is a dual NPN transistor housed in a compact SOT-363/SC-88 package, making it suitable for low-power surface mount applications. This device is designed for general purpose amplifier applications.
Key electrical characteristics include a maximum collector-emitter voltage of 45V and a continuous collector current of 100mA. The DC current gain (hFE) is a minimum of 200 at 2mA collector current and 5V Vce. The collector-emitter saturation voltage is a maximum of 600mV at 5mA base current and 100mA collector current.
This transistor operates within a junction temperature range of -55°C to +150°C and has a total device dissipation of 380mW at 25°C ambient temperature. It is Pb-Free and Halogen Free, and RoHS compliant.
The SBC847BDW1T1G is ideal for various general-purpose amplification tasks where space and power efficiency are important considerations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
45 V
100 mA
SC-88/SC70-6/SOT-363
-55°C to 150°C
200 minimum
100 MHz