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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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123,000 pcs
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123000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN bipolar junction transistor from ON Semiconductor, part number SBC846BWT1G-M02, is suitable for various electronic circuits. It features a maximum collector-emitter voltage of 65V and a maximum collector current of 100mA.
The transistor operates at a frequency of 300MHz and has a power dissipation rating of 310mW. The DC current gain (hFE) is a minimum of 200 at 2mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce) is a maximum of 600mV at 5mA base current and 100mA collector current.
Packaged in an SC-70, SOT-323 case, this component is designed for surface mounting. The operating temperature range is up to 150°C (TJ). It is supplied in an SC-70-3 (SOT323) supplier device package.
Environmental compliance includes RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 65 V.
The maximum collector current is 100 mA.
The operating temperature is up to 150°C (TJ).
It is available in the SC-70, SOT-323 package.
The mounting type is Surface Mount.