| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,987,000 pcs
|
3987000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor SBC846BWT1G is an NPN silicon bipolar junction transistor (BJT) suitable for general-purpose amplifier applications. It is housed in a compact SC-70-3 (SOT-323) surface-mount package, designed for low-power applications.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 65V and a continuous collector current (IC) of 100mA. The device offers a typical DC current gain (hFE) of 200 at 2mA collector current and 5V VCE, with a maximum collector-emitter saturation voltage (VCE(sat)) of 600mV at 100mA collector current and 5mA base current. Its transition frequency (fT) is 100MHz.
This transistor operates within a temperature range of -55°C to 150°C. It is constructed with Pb-free and Halogen-free materials, adhering to RoHS compliance standards. The surface-mount package makes it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 65 V.
The maximum continuous collector current is 100 mA.
The minimum DC current gain (hFE) is 200 at IC=2mA, VCE=5V.
The typical transition frequency is 100 MHz.
The operating temperature range is -55°C to 150°C.
The package type is SC-70 (SOT-323).
The mounting type is Surface Mount.