SBC846BPDW1T1G The ON Semiconductor SBC846BPDW1T1G is a dual NPN/PNP transistor designed for general purpose amplifier applications. It features a 65V collector-emitter voltage and is housed in a compact SOT-363 surface mount package.
Mfr Part #:

SBC846BPDW1T1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SBC846BPDW1T1G is a dual NPN/PNP transistor designed for general purpose amplifier applications. It features a 65V collector-emitter voltage and is housed in a compact SOT-363 surface mount package.
✓ Total Stock: 32,738 pcs
$ Price Range: $0.99

SBC846BPDW1T1G Available from 3 distributors

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SBC846BPDW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SBC846BPDW1T1G Description

Short technical summary and product information.

The ON Semiconductor SBC846BPDW1T1G is a versatile dual transistor featuring complementary NPN and PNP types within a single package. Designed for general purpose amplifier applications, this device offers a maximum collector-emitter voltage of 65V for the NPN type and -65V for the PNP type. It can handle a continuous collector current of up to 100mA (NPN) or -100mA (PNP) and a peak current of 200mA (NPN) or -200mA (PNP).

 

This transistor array is housed in a SOT-363 (SC-88) surface mount package, making it suitable for low power applications where space is a constraint. The device operates over a wide temperature range from -55°C to +150°C. Key electrical characteristics include a DC current gain (hFE) of 200 at 2mA/5V and a frequency response up to 100MHz.

 

The SBC846BPDW1T1G series is Pb-Free and Halogen Free, complying with RoHS standards. Its small footprint and complementary nature make it a practical choice for various circuit designs requiring compact amplification stages.

SBC846BPDW1T1G Quick Information

Product Type: Dual General Purpose Transistor
Canonical Name: On Semiconductor SBC846BPDW1T1G NPN/PNP Dual General Purpose Transistor
Subcategory: NPN/PNP Duals

SBC846BPDW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SBC846BPDW1T1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SBC846BPDW1T1G Features

  • Dual NPN and PNP transistors in one package.
  • 65V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SOT-363 surface mount package.
  • Wide operating temperature range.

SBC846BPDW1T1G Applications

  • Suitable for general purpose amplification.
  • Ideal for low power circuit designs.
  • Used in space-constrained applications.
  • Complementary NPN/PNP functionality.

SBC846BPDW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the SBC846BPDW1T1G?

65V for NPN and -65V for PNP.

What is the package type of this transistor array?

SOT-363 surface-mount package.

What is the operating temperature range?

-55°C to +150°C.

Is the SBC846BPDW1T1G Pb-free?

Yes, it is Pb-free.

Is the SBC846BPDW1T1G halogen free?

Yes, it is halogen free.

What is the DC current gain (hFE) of this transistor?

Minimum 200 at 2mA collector current and 5V Vce.

What is the transition frequency?

100 MHz.

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