SBC846BLT1G The ON Semiconductor SBC846BLT1G is an NPN silicon transistor designed for general-purpose applications. It offers a 65V collector-emitter voltage and 100mA continuous current.
Mfr Part #:

SBC846BLT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SBC846BLT1G is an NPN silicon transistor designed for general-purpose applications. It offers a 65V collector-emitter voltage and 100mA continuous current.
Total Stock: 208,758 pcs
$ Price Range: $0.99

SBC846BLT1G Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
208,020 pcs
208020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
738 pcs
738 pcs On Request 1 On Request On Request On Request On Request On Request

SBC846BLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Rating (Human Body Model)
ESD Rating - Machine Model
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ TA = 25 °C, Alumina Substrate)
Power Dissipation (Maximum @ TA = 25 °C, FR -5 Board)
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SBC846BLT1G Description

Short technical summary and product information.

The ON Semiconductor SBC846BLT1G is a general-purpose NPN silicon transistor housed in a compact SOT-23-3 package. It is rated for a maximum collector-emitter voltage of 65V and a continuous collector current of 100mA, with a frequency response up to 100MHz.

 

This transistor features a high DC current gain (hFE) of 200 at 2mA and 5V, and a Vce saturation of 600mV at 5mA and 100mA. It operates within a wide temperature range of -55°C to 150°C.

 

The device is designed for surface mount applications and offers robust ESD protection, with ratings exceeding 4000V for the Human Body Model and 400V for the Machine Model. It is also RoHS, Halogen, and Lead-Free compliant.

 

Key specifications include a power dissipation of 225mW on an FR-5 board or 300mW on an alumina substrate. The SBC846BLT1G is suitable for various electronic circuits requiring a reliable NPN switching or amplification component.

SBC846BLT1G Quick Information

Product Type: NPN Silicon Transistor
Series: SBC846BLT1G
Canonical Name: NPN Silicon Transistor, 65V, 100mA, 100MHz, SOT-23-3
Subcategory: Bipolar (BJT) - Single

SBC846BLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

SBC846BLT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SBC846BLT1G Features

  • NPN silicon transistor for general applications.
  • 65V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • 100MHz frequency response.
  • Compact SOT-23-3 surface mount package.

SBC846BLT1G Applications

  • Suitable for general switching circuits.
  • Used in signal amplification stages.
  • Ideal for compact electronic designs.
  • Robust ESD protection for sensitive applications.

SBC846BLT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

65V.

What is the maximum continuous collector current?

100mA.

What is the package type?

SOT-23-3 (TO-236, SC-59).

What is the operating temperature range?

-55°C to +150°C.

What is the DC current gain (hFE)?

Minimum 200 at 2mA collector current and 5V collector-emitter voltage.

What is the transition frequency?

100MHz.

Is the SBC846BLT1G lead-free and halogen-free?

Yes, it is verified lead-free and halogen-free.

Home
Account

Categories