| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Halogen Free | |
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| Vce Saturation (Max) @ Ib, Ic | |
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The SBC846BDW1T1G from ON Semiconductor is a dual NPN bipolar transistor housed in a compact SOT-363/SC-88 package, making it suitable for low-power surface mount applications. This device is designed for general-purpose amplifier applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 65V and a continuous collector current (IC) of 100mA. The transistor offers a DC current gain (hFE) ranging from 200 to 450 depending on the specific variant and operating conditions. It also has a gain bandwidth product (fT) of 100MHz and a maximum power dissipation of 380mW.
The operating temperature range is from -55°C to +150°C. The device is Pb-Free, Halogen Free, and RoHS Compliant. Its small footprint and general-purpose nature make it a versatile component for various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the SBC846BDW1T1G is 65V.
The continuous collector current (IC) is rated at 100mA.
The operating temperature range is -55°C to 150°C.
The SBC846BDW1T1G is supplied in a SOT-363 package.
Yes, the SBC846BDW1T1G is RoHS3 Compliant.