SBC846ALT1G The ON Semiconductor SBC846ALT1G is an NPN silicon general-purpose transistor in a SOT-23-3 package. It offers a 65V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

SBC846ALT1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor SBC846ALT1G is an NPN silicon general-purpose transistor in a SOT-23-3 package. It offers a 65V collector-emitter voltage and 100mA continuous collector current.
Total Stock: 891,687 pcs
$ Price Range: $0.99

SBC846ALT1G Available from 5 distributors

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SBC846ALT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Rating (Human Body Model)
ESD Rating - Machine Model
Emitter-Base Breakdown Voltage
Frequency
Halogen Free
Junction and Storage Temperature Range
Mounting Type
Operating Temperature
Pb-Free
Power
SVHC Present
Supplier Device Package
Supplier Package
Thermal Resistance Junction To Ambient (@ Note 1 (FR -5 Board)
Thermal Resistance Junction To Ambient (@ Note 2 (Alumina Substrate)
Total Device Dissipation (Maximum @ TA=25 °C, Alumina Substrate)
Total Device Dissipation (Maximum @ TA=25 °C, FR -5 Board)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SBC846ALT1G Description

Short technical summary and product information.

The ON Semiconductor SBC846ALT1G is a general-purpose NPN silicon transistor designed for various electronic applications. It features a maximum collector-emitter voltage of 65V and a continuous collector current of 100mA.

 

This transistor is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. It operates within a temperature range of -55°C to +150°C and has a power dissipation of up to 300mW on an alumina substrate.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 110 at 2mA/5V and a typical gain-bandwidth product (fT) of 100MHz. The device also exhibits a Vce saturation of 600mV at 5mA/100mA.

 

For applications requiring high reliability, the SBC846ALT1G series is AEC-Q101 qualified and PPAP capable. It is also Pb-free and halogen-free, complying with RoHS standards.

SBC846ALT1G Quick Information

Product Type: NPN Silicon Transistor
Series: BC846ALT1G
Canonical Name: NPN Silicon General Purpose Transistor
Subcategory: Transistors

SBC846ALT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SBC846ALT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SBC846ALT1G Features

  • NPN silicon general purpose transistor.
  • 65V collector-emitter voltage rating.
  • 100mA continuous collector current.
  • Compact SOT-23-3 surface-mount package.
  • AEC-Q101 qualified for automotive applications.

SBC846ALT1G Applications

  • Suitable for general amplification tasks.
  • Used in switching circuit designs.
  • Ideal for space-constrained PCBs.
  • Applicable in automotive systems.

SBC846ALT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

65Vdc.

What is the package type?

SOT-23 (SOT-23-3, TO-236-3, SC-59).

What is the operating temperature range?

-55°C to +150°C (junction).

What is the DC current gain (hFE)?

Minimum 110 at 2mA collector current and 5V Vce.

What is the collector-emitter saturation voltage?

Maximum 600mV at 5mA base current and 100mA collector current.

What is the gain bandwidth product?

100MHz typical.

What is the ESD rating?

Human body model >4000V, machine model >400V.

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