SBC817-40LT1G The SBC817-40LT1G is an NPN silicon transistor from ON Semiconductor designed for general-purpose applications. It features a 45V collector-emitter voltage and a 500mA continuous collector current.
Mfr Part #:

SBC817-40LT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The SBC817-40LT1G is an NPN silicon transistor from ON Semiconductor designed for general-purpose applications. It features a 45V collector-emitter voltage and a 500mA continuous collector current.
✓ Total Stock: 959,038 pcs
$ Price Range: $0.99

SBC817-40LT1G Available from 4 distributors

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SBC817-40LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Delay Time
Frequency
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SBC817-40LT1G Description

Short technical summary and product information.

The SBC817-40LT1G is a general-purpose NPN silicon transistor manufactured by ON Semiconductor. It is designed to handle a maximum collector-emitter voltage (VCEO) of 45V and a continuous collector current (IC) of 500mA. The device offers a DC current gain (hFE) of at least 250 at 100mA and 1V.

 

This transistor is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained applications. It operates within a junction and storage temperature range of -65°C to 150°C. The device is Pb-Free and Halogen Free, complying with RoHS standards.

 

Key electrical characteristics include a collector-emitter saturation voltage (VCE(sat)) of 0.7V maximum at 500mA/50mA and a base-emitter on voltage (VBE(on)) of 1.2V maximum at 500mA/1V. The gain-bandwidth product (fT) is 100MHz minimum at 10mA and 5V, with an output capacitance (Cobo) of 10pF typical at 10V and 1MHz.

SBC817-40LT1G Quick Information

Product Type: NPN Silicon Transistor
Series: SBC817
Canonical Name: SBC817-40LT1G NPN Silicon Transistor
Subcategory: Bipolar (BJT) - Single

SBC817-40LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SBC817-40LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SBC817-40LT1G Features

  • NPN silicon transistor for general applications.
  • Maximum collector-emitter voltage of 45V.
  • Continuous collector current of 500mA.
  • Compact SOT-23-3 surface-mount package.
  • Pb-Free and Halogen Free compliance.

SBC817-40LT1G Applications

  • Suitable for general switching tasks.
  • Ideal for small signal amplification.
  • Used in low power electronic circuits.
  • Applicable in space-constrained designs.

SBC817-40LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the SBC817-40LT1G?

The maximum collector-emitter voltage (VCEO) for the SBC817-40LT1G is 45V.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the SBC817-40LT1G is 500mA.

What is the package type for this transistor?

The SBC817-40LT1G is supplied in a SOT-23-3 (TO-236) package suitable for surface mounting.

What is the operating temperature range?

The operating junction and storage temperature range for this device is -65°C to 150°C.

Is the SBC817-40LT1G RoHS compliant?

Yes, the SBC817-40LT1G is RoHS3 Compliant.

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