SBC807-40LT1G The On Semiconductor SBC807-40LT1G is a PNP bipolar junction transistor designed for general-purpose applications. It offers a 45V collector-emitter voltage and 500mA continuous collector current.
Mfr Part #:

SBC807-40LT1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SBC807-40LT1G is a PNP bipolar junction transistor designed for general-purpose applications. It offers a 45V collector-emitter voltage and 500mA continuous collector current.
Total Stock: 973,170 pcs
$ Price Range: $0.99

SBC807-40LT1G Available from 5 distributors

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Non-Authorised

SBC807-40LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter On Voltage
Breakdown Voltage (Minimum @ IC = -10 mA)
Breakdown Voltage (Minimum @ IE = -1.0 /C 0109 A)
Breakdown Voltage (Minimum @ VEB = 0, IC = -10 /C 0109 A)
Capacitance
Collector - Emitter Saturation Voltage
Current
Current (Maximum)
Current-Gain - Bandwidth Product
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Leakage Current (Maximum @ VCB = -20 V, TJ = 150 °C)
Leakage Current (Maximum @ VCB = 20 V)
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C)
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
gain (Minimum/Typical/Maximum @ IC = -100 mA, VCE = -1.0 V)

SBC807-40LT1G Description

Short technical summary and product information.

The SBC807-40LT1G from ON Semiconductor is a PNP silicon bipolar junction transistor. It is designed for general-purpose applications and features a maximum collector-emitter voltage of -45V and a continuous collector current of up to 500mA.

 

This transistor operates within a junction and storage temperature range of -55°C to +150°C. Key electrical characteristics include a DC current gain (hFE) of 250 at 100mA and 1V, a collector-emitter saturation voltage (VCE(sat)) of 700mV at 500mA and 50mA, and a gain-bandwidth product (fT) of 100MHz at 10mA and -5V.

 

The device is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. It is Pb-free and Halogen-free, complying with RoHS standards. The transistor is qualified for automotive applications with an S prefix.

 

With its robust specifications and surface-mount packaging, the SBC807-40LT1G is well-suited for various switching and amplification tasks in electronic circuits.

SBC807-40LT1G Quick Information

Product Type: Transistor
Canonical Name: PNP Bipolar Junction Transistor
Subcategory: PNP

SBC807-40LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SBC807-40LT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SBC807-40LT1G Features

  • PNP silicon bipolar junction transistor.
  • Maximum collector-emitter voltage of -45V.
  • Continuous collector current of 500mA.
  • Surface mount SOT-23-3 package.
  • Pb-free and Halogen-free compliance.

SBC807-40LT1G Applications

  • Suitable for general purpose amplification.
  • Used in various switching applications.
  • Ideal for space-constrained designs.
  • Automotive applications with S prefix.

SBC807-40LT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the SBC807-40LT1G?

-45 V

What is the continuous collector current rating for this PNP transistor?

500 mA

What is the operating temperature range for the SBC807-40LT1G?

-55°C to +150°C

What package type is the SBC807-40LT1G supplied in?

SOT-23-3

Is the SBC807-40LT1G RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the DC Current Gain (hFE) of the SBC807-40LT1G at 100mA and 1V?

250

What is the gain-bandwidth product (fT) for this transistor?

100 MHz

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