| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,183 pcs
|
2183 pcs | On Request | 1 | On Request | On Request | 1439+ | On Request | On Request |
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| Halogen Free | |
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| Voltage |
The SBAS16WT1G is a small signal switching diode manufactured by On Semiconductor. It is designed for general purpose switching applications with a maximum reverse voltage of 100V and a continuous forward current of 200mA. The diode offers fast switching performance with a reverse recovery time of 6ns.
Electrical characteristics include a forward voltage of 715mV at 1mA, 866mV at 10mA, and 1.25V at 150mA. Reverse leakage current is 1µA at 100V. The device has a total power dissipation of 200mW when mounted on a ceramic substrate, with a derating factor of 1.6mW/°C above 25°C. Junction temperature range is -55°C to 150°C.
The SBAS16WT1G is housed in a SC-70-3 (SOT-323) surface mount package, suitable for automated assembly. It is supplied in tape and reel packaging with 3000 units per reel. The device is Pb-free and halogen free, compliant with RoHS and REACH standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous reverse voltage is 100V.
The maximum continuous forward current is 200mA.
At 1mA, forward voltage is 715mV; at 10mA, 866mV; at 50mA, 1000mV; at 150mA, 1.25V.
The reverse recovery time is 6ns (test condition: IF=10mA, IR=10mA, RL=50Ω).
It is available in SC-70-3 (SOT-323) surface mount package.
The capacitance is 2pF at 0V and 1MHz.
The operating and storage temperature range is -55°C to 150°C.