| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
234,524 pcs
|
234524 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| AEC-Q101 | |
| Automotive Grade | |
| Breakdown Voltage | |
| Capacitance @ Vr, F | |
| Continuous Reverse Voltage | |
| Current | |
| Forward Voltage (Typical @ IF=1 mA) | |
| Forward Voltage (Typical @ IF=10 mA) | |
| Forward Voltage (Typical @ IF=50 mA) | |
| Halogen Free | |
| MSL (Moisture Sensitivity Level) | |
| Mounting Type | |
| Non-Repetitive Peak Forward Surge Current | |
| Operating Temperature | |
| Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C) | |
| Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C) | |
| Repetitive Peak Forward Current | |
| Reverse Leakage Current (Maximum @ VR = 25 V, TJ = 150 °C) | |
| Reverse Leakage Current (Maximum @ VR=100 V, TA=25 °C) | |
| Reverse Leakage Current (Maximum @ VR=75 V, Tj=150 °C) | |
| Reverse Recovery Time (trr) | |
| Speed | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Thermal Resistance, Junction-to-Ambient (Maximum @ Alumina Substrate, Note 2) | |
| Thermal Resistance, Junction-to-Ambient (Maximum @ FR -5 Board, Note 1) | |
| Voltage |
The SBAS16LT3G is a high-speed switching diode designed and manufactured by On Semiconductor. It is part of the BAS16L family and features a standard diode technology with a maximum reverse voltage of 100V and a continuous forward current of 200mA. The diode is optimized for small-signal switching applications, with a typical reverse recovery time of just 6ns (at IF=IR=10mA, RL=50Ω), enabling efficient high-frequency operation.
Forward voltage is typically 715mV at 1mA, 855mV at 10mA, 1.0V at 50mA, and 1.25V at 150mA. The device exhibits low diode capacitance of 2pF (at 0V, 1MHz), which minimizes signal distortion. Maximum reverse leakage current is 1.0µA at 25°C and 100V, and increases to 50µA at 150°C and 75V. The repetitive peak forward current is rated at 1.0A, with a non-repetitive surge current of 1.8A (60Hz).
The SBAS16LT3G is available in a surface-mount SOT-23-3 (TO-236) package with gull-wing terminals, suitable for automated assembly. It is supplied in tape and reel packaging with a standard quantity of 10,000 units per reel. Thermal characteristics include a junction-to-ambient thermal resistance of 556°C/W on an FR-5 board and 417°C/W on an alumina substrate. Power dissipation is 225mW on FR-5 and 300mW on alumina at 25°C. The device operates over a junction temperature range of -55°C to +150°C.
The SBAS16LT3G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications. It is also Pb-Free, Halogen Free/BFR Free, and RoHS compliant. Typical applications include high-speed switching, general-purpose rectification, and signal clamping in automotive, industrial, and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.17 | $0.17 |
| 10+ | $0.10 | $0.10 |
| 100+ | $0.06 | $0.06 |
| 500+ | $0.05 | $0.05 |
| 1,000+ | $0.04 | $0.04 |
| 2,000+ | $0.04 | $0.04 |
| 5,000+ | $0.03 | $0.03 |
| 10,000+ | $0.03 | $0.03 |
| 20,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
200mA continuous forward current, with repetitive peak of 1.0A and surge of 1.8A.
Typical forward voltage is 715mV at 1mA, 855mV at 10mA, 1.0V at 50mA, and 1.25V at 150mA.
6ns (typical) at IF=IR=10mA, RL=50Ω.
Surface-mount SOT-23-3 (TO-236, SC-59) package.
Yes, it is AEC-Q101 qualified and PPAP capable.
-55°C to +150°C.