SBAS16DXV6T1G

The SBAS16DXV6T1G is a dual switching diode array from onsemi, containing two independent standard switching diodes in a single SOT-563 surface-mount package. Each diode is rated for a maximum continuous reverse voltage of 100V and a recurrent peak forward current of 200mA, with a peak forward surge current capability of 500mA (10 µs pulse).

Electrical characteristics include a maximum forward voltage of 715 mV at 1 mA, 855 mV at 10 mA, 1.0V at 50 mA, and 1.25V at 150 mA. The device features a fast reverse recovery time of 6 ns (tested at IF = IR = 10 mA, RL = 50 Ω) and a low capacitance of 2.0 pF (at VR = 0V, f = 1 MHz). Maximum reverse current is 1.0 µA at 100V, and 50 µA at 75V and 150°C junction temperature.

The device is housed in a Pb-free, Halogen Free/BFR Free SOT-563 package and is suitable for surface mount assembly. Total device dissipation is 357 mW when one junction is heated and 500 mW when both junctions are heated, with a junction-to-ambient thermal resistance of 350°C/W and 250°C/W respectively. The operating temperature range is -55°C to 150°C.