SB29003TF The On Semiconductor SB29003TF is an NPN bipolar transistor designed for high voltage applications. It features a 400V breakdown voltage and a 300mA continuous collector current.
Mfr Part #:

SB29003TF

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor SB29003TF is an NPN bipolar transistor designed for high voltage applications. It features a 400V breakdown voltage and a 300mA continuous collector current.
Total Stock: 10,611 pcs
$ Price Range: $0.99

SB29003TF Available from 3 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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6,665 pcs
6665 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,554 pcs
2554 pcs On Request 1 On Request On Request 12+ On Request On Request
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1,392 pcs
1392 pcs On Request 1 On Request On Request 13+ On Request On Request

SB29003TF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

SB29003TF Description

Short technical summary and product information.

The SB29003TF from On Semiconductor is a single NPN bipolar junction transistor (BJT) designed for high voltage applications. This component offers a maximum collector-emitter breakdown voltage of 400V and can handle a continuous collector current of up to 300mA, with a power dissipation rating of 2W.

 

It is specified with a minimum DC current gain (hFE) of 50 at 10mA collector current and 10V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 750mV at 5mA base current and 50mA collector current. The operating junction temperature range is from -55°C to 150°C.

 

The SB29003TF is housed in a TO-261-4, TO-261AA package, also referred to as SOT-223-4, and is designed for surface mounting. This makes it suitable for various electronic circuits requiring a high-voltage NPN transistor in a compact form factor.

SB29003TF Quick Information

Product Type: Bipolar Transistor
Canonical Name: SB29003TF NPN Transistor
Subcategory: Single

SB29003TF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SB29003TF Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SB29003TF Features

  • High voltage NPN bipolar transistor.
  • 400V collector-emitter breakdown voltage.
  • 300mA continuous collector current.
  • Surface mount SOT-223-4 package.
  • Operates up to 150°C junction temperature.

SB29003TF Applications

  • High voltage switching power supply circuits.
  • General purpose amplification and switching.
  • Telecommunication and industrial control systems.
  • LED lighting and motor drive applications.

SB29003TF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the SB29003TF?

The minimum collector-emitter breakdown voltage is 400V.

What is the maximum collector current rating?

The maximum continuous collector current is 300mA.

What is the power dissipation of this transistor?

The maximum power dissipation is 2W.

What package is the SB29003TF available in?

It is available in a TO-261-4 / TO-261AA surface mount package, also designated as SOT-233-4.

What is the maximum operating junction temperature?

The maximum junction temperature is 150°C.

What is the DC current gain (hFE) of the SB29003TF?

The minimum DC current gain is 50 at Ic=10mA and Vce=10V.

What is the Vce saturation voltage?

The maximum Vce saturation voltage is 750mV at Ib=5mA and Ic=50mA.

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