| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,238 pcs
|
3238 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
950 pcs
|
950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
260 pcs
|
260 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Power Dissipation | |
| Transistor Type |
The CJ S8050 is an NPN epitaxial silicon transistor commonly used for switching and amplification applications in electronic circuits. This transistor features a collector-emitter voltage rating of 25V and a maximum collector current of 1.5A.
With a power dissipation capacity of 1000mW, the S8050 offers a typical gain of approximately 110, with a maximum gain capacity around 400, making it versatile for amplifier designs. The transistor is constructed with three layers: a P-doped base layer sandwiched between two N-doped layers, corresponding to the emitter and collector terminals.
The S8050 is typically found in a TO-92 package, suitable for through-hole mounting. Its design makes it a staple component in various circuit designs requiring reliable switching or amplification functions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The S8050 is an NPN epitaxial silicon transistor.
The S8050 has a maximum collector current of 1.5A.
The S8050 has a collector-emitter voltage rating of 25V.
The S8050 transistor has a power dissipation of 1000mW.
The S8050 transistor has a typical gain of approximately 110.
The S8050 transistor is supplied in a TO-92 package.