| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon S70GL02GS11FHI010 is a 2 Gbit (256 MB) MIRRORBIT™ Flash memory device fabricated using 65-nm process technology. It features a parallel interface and operates with a 3.0 V core voltage, supporting a wide I/O voltage range from 1.65 V to VCC.
Key performance characteristics include a fast page access time of 25 ns and a random access time of 110 ns. The device includes a 512-byte programming buffer, enabling faster effective programming times. It utilizes uniform 128-KB sectors, with a total of two thousand forty-eight sectors. The memory is designed for embedded applications requiring high density, performance, and lower power consumption.
This Flash memory supports an industrial temperature range of -40°C to +85°C and automotive AEC-Q100 grade 2 (-40°C to +105°C). It is available in a 64-ball Fortified BGA package measuring 13 mm x 11 mm. Typical erase cycles are 100,000, with 20-year data retention.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 2 Gbit or 256 MB.
This is a parallel interface Flash memory.
The core voltage is 3.0 V, with an I/O voltage range of 1.65 V to VCC.
The page access time is 25 ns, and the random access time is 110 ns.
The programming buffer size is 512 bytes.
The operating temperature range is -40°C to +105°C.
It is supplied in a 64-ball Fortified BGA package.