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S70GL02GS11FHI010 The Infineon Technologies S70GL02GS11FHI010 is a 2 Gbit Parallel NOR Flash memory device. It operates from a 2.7V to 3.6V supply with an access time of 110 ns.
Mfr Part #:

S70GL02GS11FHI010

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies S70GL02GS11FHI010 is a 2 Gbit Parallel NOR Flash memory device. It operates from a 2.7V to 3.6V supply with an access time of 110 ns.
✓ Total Stock: 3,456 pcs
$ Price Range: $1.28

S70GL02GS11FHI010 Available from 1 distributor

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✓ Non-Authorised
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Components Technology Group, Inc. ✓
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3,456 pcs
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3456 pcs On Request 1 On Request On Request On Request On Request On Request
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S70GL02GS11FHI010 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Access Time
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Operating Voltage
Supplier Device Package
Technology
Voltage
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S70GL02GS11FHI010 Description

Short technical summary and product information.

The Infineon Technologies S70GL02GS11FHI010 is a 2 Gbit MIRRORBIT™ Flash memory device fabricated using 65-nm process technology. It offers a fast page access time of 25 ns and a random access time of 110 ns. This device features a write buffer for efficient programming, making it suitable for embedded applications requiring high density, performance, and low power consumption.

 

Key electrical characteristics include a 2.7V to 3.6V single supply voltage and a versatile I/O voltage range. The memory is organized as 128M x 16 bits and utilizes a parallel interface. It supports uniform 128-KB sectors for erase operations, with a total of 2048 sectors.

 

The device is housed in a 64-FBGA (13x11 mm) package and is designed for surface mounting. It operates within an industrial temperature range of -40°C to 85°C. The memory offers 20-year data retention and 100,000 erase cycles per sector typical.

S70GL02GS11FHI010 Quick Information

Product Type: Flash Memory
Series: GL-S
Canonical Name: Infineon Technologies S70GL02GS11FHI010 2 Gbit Parallel NOR Flash Memory
Subcategory: NOR Flash

S70GL02GS11FHI010 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

S70GL02GS11FHI010 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S70GL02GS11FHI010 Features

  • 2 Gbit Parallel NOR Flash memory.
  • 110 ns random access time.
  • 2.7V to 3.6V operating voltage.
  • 64-FBGA surface mount package.
  • Industrial temperature range (-40°C to 85°C).

S70GL02GS11FHI010 Applications

  • Embedded code storage applications.
  • Industrial control and automation systems.
  • Networking and telecommunications equipment.
  • Automotive infotainment and telematics.
  • Boot code storage for processors.

S70GL02GS11FHI010 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the memory size of the S70GL02GS11FHI010?

The memory size is 2 Gbit.

What is the operating voltage for this flash memory?

The operating voltage is 2.7V to 3.6V.

What is the access time of the S70GL02GS11FHI010?

The random access time is 110 ns, and the page access time is 25 ns.

What type of package is the S70GL02GS11FHI010 in?

It is in a 64-FBGA (13x11 mm) package designed for surface mounting.

What is the operating temperature range?

The operating temperature range is -40°C to 85°C.

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