| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,900 pcs
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1900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Cypress Semiconductor S34MS16G202BHI000 is a 16 Gbit SLC NAND Flash memory device organized as 4G x 4 bits. It features a parallel memory interface compliant with the ONFI 1.0 standard and operates from a Vcc supply voltage of 2.7 V to 3.6 V. The device offers a page size of 2048 bytes (plus 64 spare bytes) and a block size of 128 kbytes (64 pages).
Key performance specifications include a typical program time of 200 µs, a typical block erase time of 3.5 ms, and a sequential access time of 25 ns. The memory is rated for 100,000 program/erase cycles and provides a data retention of 10 years. It is available in a 63-ball VFBGA package and supports an extended operating temperature range of -40°C to 85°C, with an optional range up to 105°C.
This SLC NAND Flash is suitable for embedded systems, industrial applications, and other designs requiring reliable non-volatile storage with high endurance and long data retention. The parallel interface simplifies integration with a wide range of microcontrollers and memory controllers.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The S34MS16G202BHI000 has a density of 16 Gbit (8 Gb per die, 2 die).
The Vcc supply voltage range is 2.7 V to 3.6 V.
The device operates from -40°C to 85°C.
It is available in a 63-VFBGA package.
The device is rated for 100,000 program/erase cycles typical.
The data retention is 10 years typical.
It supports the Open NAND Flash Interface (ONFI) 1.0.