| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,077 pcs
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1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Cypress Semiconductor S34MS04G100BHI000 is a high-density non-volatile memory component designed for various applications requiring reliable data storage. This IC offers a substantial 4Gbit memory size, organized as 512M x 8 bits, utilizing FLASH - NAND technology.
Key electrical specifications include a fast 45ns access time and a 45ns write cycle time, ensuring efficient data transfer. The device operates within a voltage supply range of 1.7V to 1.95V, making it suitable for low-power designs. The operating temperature range is specified from -40°C to 85°C (TA), allowing for use in demanding environmental conditions.
Packaged in a compact 63-VFBGA, the S34MS04G100BHI000 is designed for surface mount applications. Its parallel interface facilitates straightforward integration into system designs. The component is classified under the MS-1 series and is RoHS3 compliant.
This memory IC is a robust solution for embedded systems, data logging, and firmware storage where performance and capacity are critical. Its specifications make it a versatile choice for designers needing a dependable parallel flash memory solution.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The S34MS04G100BHI000 has a 4 Gbit memory size.
It is a non-volatile NAND flash memory with a parallel interface.
The memory is organized as 512M x 8 bits.
Operating voltage is 1.7 V to 1.95 V.
The device operates from -40°C to 85°C.
The S34MS04G100BHI000 is supplied in a 63-VFBGA package (supplier device package 63-BGA, 11 x 9 mm).
Access time is 45 ns.