| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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398 pcs
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398 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon S34MS02G204TFI010 is a NAND FLASH memory integrated circuit designed for various electronic applications. It features a TSOP-48 package, suitable for surface mount assembly.
Key electrical specifications include an operating voltage range of 2.7V to 3.6V. The component offers a data retention period of 10 years. Performance metrics such as page program time are 200 us, write cycle time is 200 us, and block erase time is 3.5ms.
This NAND FLASH memory includes several functional features such as a read buffer function, ECC error correction, OTP region write protection and lock function, hardware write protection, and a copy back write function. The operating temperature range is -40℃ to +85℃.
Environmental compliance indicates RoHS3 compliance and MSL Level 3. The REACH status is unaffected. This component is designed for reliable data storage and retrieval in demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $15.36 | $15.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage for the S34MS02G204TFI010 is between 2.7V and 3.6V.
The S34MS02G204TFI010 comes in a TSOP-48 package.
The operating temperature range for the S34MS02G204TFI010 is -40℃ to +85℃.
The data retention period for the S34MS02G204TFI010 is 10 years.