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28,766 pcs
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28766 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Cypress Semiconductor S34MS02G204BHI010 is a 2 Gbit NAND Flash Memory device designed for embedded systems. It operates with a parallel interface and offers a fast access time of 45 ns.
This memory component is organized as 128M x 16 and utilizes NAND Flash technology. It requires a supply voltage ranging from 1.7V to 1.95V and operates within an industrial temperature range of -40°C to 85°C. The device is available in a 63-BGA package, designed for surface mounting.
Key features include a write cycle time of 45 ns and a technology type of FLASH - NAND. The datasheet also indicates an 8 Gb density for a dual-die stack configuration, with industrial and automotive temperature options. The device supports various NAND Flash interface features and has a typical program/erase cycle rating of 100,000.
This component is suitable for applications requiring non-volatile storage with high density and reliable performance. Its surface-mount 63-BGA package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 2 Gbit.
It is a FLASH - NAND memory.
The memory interface is Parallel.
The operating voltage is between 1.7V and 1.95V.
The operating temperature range is -40°C to 85°C.
It is supplied in a 63-BGA package.
The RoHS status is RoHS3 Compliant.