| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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52,927 pcs
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52927 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Cypress Semiconductor S34MS02G100BHI003 is a 2 Gigabit NAND Flash memory integrated circuit designed for embedded applications. It utilizes a parallel interface and offers a memory organization of 256M x 8.
Key electrical specifications include a supply voltage range of 1.7V to 1.95V and an access time of 45 ns. The device supports a page program time of 200 µs (typical) and a block erase time of 3.5 ms (typical). It is rated for 100,000 program/erase cycles and offers 10 years of data retention.
This component operates within an industrial temperature range of -40°C to 85°C. It is supplied in a 63-ball BGA (63-VFBGA) package, suitable for surface mounting.
The S34ML08G1 datasheet indicates this device is a dual-die stack of two S34ML04G1 die, compliant with ONFI 1.0.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 2 Gbit, organized as 256M x 8 bits.
It uses a parallel interface.
The access time is 45 ns.
The core voltage range is 1.7V to 1.95V, and the supply voltage range is 2.7V to 3.6V.
The operating temperature range is -40°C to 105°C.
The package is a 63-VFBGA (11x9 mm) for surface mount.
The typical program/erase cycle endurance is 100,000 cycles.