| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,717 pcs
|
1717 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Halogen Free | |
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| Memory Interface | |
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| Memory Size | |
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| Supplier Device Package | |
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| Voltage | |
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The Cypress Semiconductor S34ML08G101TFI203 is an 8 Gbit NAND Flash Memory device featuring a parallel interface. This memory component is designed for embedded applications requiring reliable data storage.
Key electrical specifications include an operating voltage range of 2.7V to 3.6V and a write cycle time of 25ns. The device offers a density of 8 Gbit with a 1G x 8 organization. It operates within an industrial temperature range of -40°C to 85°C.
Packaged in a 48-TSOP I format, this surface-mount component is suitable for various electronic designs. The memory type is Non-Volatile FLASH - NAND. The device also supports features like Multiplane Program and Erase commands, Copy Back Program, and Read Cache, enhancing its functionality for embedded systems.
This component is RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited. Its lead-free and low-halogen status makes it suitable for environmentally conscious manufacturing processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2.7V to 3.6V, with a typical supply of 3.3V.
48-TSOP I (12x20x1.2 mm) and 63-ball BGA (9x11x1 mm).
-40°C to 85°C.
1G x 8 (8Gbit total).
Parallel interface.
100,000 program/erase cycles typical and 10-year data retention typical.