| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,208 pcs
|
5208 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
|
3,503 pcs
|
3503 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This Cypress Semiconductor S34ML04G200TFI000 is a high-density NAND Flash Memory integrated circuit designed for embedded applications. It offers a substantial 4 Gbit storage capacity with a parallel interface, supporting a 48-TSOP package.
The device operates reliably within a supply voltage range of 2.7V to 3.6V, with a typical operating voltage of 3.3V. The operating temperature range is specified as -40°C to 85°C, making it suitable for industrial environments. Key electrical characteristics include a write cycle time of 25ns, an endurance of 100,000 cycles, and support for ECC.
Designed with SLC (Single-Level Cell) NAND technology, this memory component ensures robust performance and data integrity. It features a page size of 2Kbyte and supports features like Copy Back Program and Read Cache. The ONFI 1.0 compliance facilitates integration with standard controllers.
The S34ML04G200TFI000 is available in a 48-TFSOP package, designed for surface mounting. Its specifications make it a suitable choice for various embedded systems requiring non-volatile data storage.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The S34ML04G200TFI000 has a density of 4 Gbit.
The S34ML04G200TFI000 uses a Parallel memory interface.
The operating voltage range is 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C.
The S34ML04G200TFI000 is available in a 48-TSOP package.
The endurance rating is 100,000 program/erase cycles.
Yes, the S34ML04G200TFI000 supports ECC.