| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
55,770 pcs
|
55770 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Cypress Semiconductor S34ML04G200BHI003 is a high-density 4 Gbit NAND Flash memory device. It features a parallel interface and a memory organization of 512M x 8.
This memory component operates within a supply voltage range of 2.7V to 3.6V, making it suitable for various embedded applications. The device is specified for an operating temperature range of -40°C to 85°C (TA).
Designed for surface mounting, the S34ML04G200BHI003 comes in a 63-BGA (11x9) package. Key performance characteristics include a random access time of 25 µs and sequential access time of 25 ns. Program time is typically 200 µs, and block erase time is typically 3.5 ms.
Reliability features include an endurance of 100,000 Program/Erase cycles and a data retention of 10 years. The device is RoHS3 compliant and has an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
NAND Flash memory.
Parallel interface.
512M x 8.
2.7V to 3.6V.
-40°C to 85°C (TA).
63-VFBGA (11x9mm) and 48-Pin TSOP (12x20mm).
100,000 program/erase cycles typical and 10 year data retention typical.