| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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54,811 pcs
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54811 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Cypress Semiconductor S34ML04G200BHI000 is a high-density 4 Gbit Non-Volatile NAND Flash Memory designed for embedded applications. It utilizes FLASH - NAND technology and offers a parallel interface with a memory organization of 512M x 8. The device operates with a supply voltage ranging from 2.7V to 3.6V and has a typical write cycle time of 25ns.
This memory component is specified for an operating temperature range of -40°C to 85°C (TA). It is available in a 63-VFBGA package, suitable for surface mount applications. The NAND Flash interface is compliant with ONFI 1.0 standards. Key performance metrics include a typical program time of 300 µs and a typical block erase time of 3.5 ms. The component boasts a typical data retention of 10 years and 100,000 program/erase cycles.
Additional features include support for Multiplane Program and Erase commands, Copy Back Program, and Read Cache functionality, enhancing its versatility in embedded systems. The manufacturer ID is listed as 01h.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 4 Gbit.
It is a Non-Volatile NAND Flash Memory.
The supply voltage range is 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C (TA).
It is available in a 63-VFBGA package.
The typical program time is 300 µs.
The typical data retention is 10 years.