| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,955 pcs
|
5955 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
1,738 pcs
|
1738 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Memory Format | |
| Memory Interface | |
| Memory Organization | |
| Memory Size | |
| Memory Type | |
| Mounting Type | |
| Operating Temperature | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Voltage | |
| Write Cycle Time |
This Cypress Semiconductor S34ML02G200TFI000 is a 2 Gbit NAND Flash Memory designed for embedded applications. It features a parallel interface and a memory organization of 256M x 8.
The device operates with a supply voltage ranging from 2.7V to 3.6V and has an industrial operating temperature range of -40°C to 85°C. Key performance specifications include a page read/program random access time of 25 µs (Max) and a sequential access time of 25 ns (Min). Program time is typically 200 µs, and block erase time is typically 3.5 ms.
Reliability is supported by up to 100,000 program/erase cycles and 10-year data retention. The memory adheres to the ONFI 1.0 standard. It is available in a 48-TFSOP package suitable for surface mounting.
This component is ideal for applications requiring non-volatile data storage with robust performance characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size is 2 Gbit.
It is a Non-Volatile NAND Flash Memory.
The memory interface is Parallel.
The supply voltage ranges from 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C (TA).
It is supplied in a 48-TFSOP package.
The typical program time is 200 µs.