| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,010 pcs
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2010 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| Halogen Free | |
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The Cypress Semiconductor S34ML02G104TFI010 is a 2 Gigabit (Gb) NAND Flash memory device designed for embedded applications. It features a parallel interface and a memory organization of 128M x 16 bits.
This non-volatile memory operates with a supply voltage ranging from 2.7V to 3.6V, making it suitable for various power-constrained systems. The device is specified for an industrial operating temperature range of -40°C to 85°C (TA).
Packaged in a 48-TFSOP (Thin Small Outline Package), the S34ML02G104TFI010 is designed for surface mount applications. Key performance characteristics include a typical program time of 200 µs and a block erase time of 3.5 ms. It offers a reliability rating of 100,000 Program/Erase cycles and 10 years of data retention.
This component is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1 Unlimited.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The S34ML02G104TFI010 has a memory size of 2 Gb.
The operating voltage range for the S34ML02G104TFI010 is 2.7V to 3.6V.
The operating temperature range is -40°C to 85°C (TA).
The S34ML02G104TFI010 is supplied in a 48-TFSOP (0.724", 18.40mm Width) package.
The typical program time is 200 µs.
The typical block erase time is 3.5 ms.
The device has a typical rating of 100,000 Program/Erase cycles.