S34ML02G100BHI003 The Cypress Semiconductor S34ML02G100BHI003 is a 2 Gbit SLC NAND Flash memory device with a parallel interface. It operates from a 2.7V to 3.6V supply and is housed in a 63-BGA package.
Mfr Part #:

S34ML02G100BHI003

Available from 3 distributors
Mfr Name: Cypress Semiconductor
Cypress Semiconductor
The Cypress Semiconductor S34ML02G100BHI003 is a 2 Gbit SLC NAND Flash memory device with a parallel interface. It operates from a 2.7V to 3.6V supply and is housed in a 63-BGA package.
Total Stock: 26,528 pcs
$ Price Range: $1.28

S34ML02G100BHI003 Available from 3 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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9,350 pcs
9350 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
8,950 pcs
8950 pcs On Request 1 On Request On Request 21+ On Request On Request
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8,228 pcs
8228 pcs On Request 1 On Request On Request On Request On Request On Request

S34ML02G100BHI003 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Device Size
Halogen Free
Memory Format
Memory Interface
Memory Organization
Memory Size
Memory Type
Mounting Type
Operating Temperature
Supplier Device Package
Supplier Package
Technology
Voltage
Write Cycle Time

S34ML02G100BHI003 Description

Short technical summary and product information.

This Cypress Semiconductor S34ML02G100BHI003 is a 2 Gbit SLC NAND Flash memory component designed for embedded applications. It features a parallel interface and supports a wide operating voltage range of 2.7V to 3.6V.

 

The device offers a page size of 2112 bytes (x8) and a block size of 128 KB (x8). Key performance characteristics include a random access time of 25 µs (Max) and a program time of 200 µs (Typ). Reliability is supported by 100,000 Program/Erase cycles (Typ) and 10-year data retention (Typ).

 

Packaged in a 63-BGA (11x9) configuration, this component is suitable for surface mount applications. It operates within an industrial temperature range of -40°C to 85°C.

 

The S34ML02G100BHI003 is compliant with RoHS3 standards and is considered low halogen. It is designed for applications requiring high-density, reliable non-volatile storage.

S34ML02G100BHI003 Quick Information

Product Type: NAND Flash Memory
Series: S34ML
Canonical Name: 2 Gbit SLC NAND Flash Memory
Subcategory: NAND Flash

S34ML02G100BHI003 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

S34ML02G100BHI003 Estimated Pricing

Qty Low High
1+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

S34ML02G100BHI003 Features

  • 2 Gbit SLC NAND Flash memory.
  • Parallel interface with 2.7V to 3.6V operation.
  • Fast 25 µs random access time.
  • Reliable 100,000 Program/Erase cycles.
  • Industrial temperature range: -40°C to 85°C.

S34ML02G100BHI003 Applications

  • Suitable for embedded systems.
  • Ideal for high-density storage needs.
  • Used in industrial applications.
  • Requires reliable data retention.

S34ML02G100BHI003 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory size of the S34ML02G100BHI003?

The memory size is 2 Gbit.

What type of memory is the S34ML02G100BHI003?

It is a Non-Volatile SLC NAND Flash memory.

What is the operating voltage for this NAND Flash memory?

The operating voltage is between 2.7V and 3.6V.

What is the operating temperature range for the S34ML02G100BHI003?

The operating temperature range is -40°C to 85°C.

What package type is the S34ML02G100BHI003 supplied in?

It is supplied in a 63-BGA (11x9) package.

What is the typical program time for the S34ML02G100BHI003?

The typical program time is 200 µs.

What is the data retention period for this NAND Flash memory?

The data retention period is typically 10 years.

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