| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,228 pcs
|
8228 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,055 pcs
|
5055 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Memory Format | |
| Memory Interface | |
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| Voltage | |
| Write Cycle Time |
The Cypress Semiconductor S34ML02G100BHI000 is a 2 Gbit NAND Flash memory device designed for high-density non-volatile storage applications. It utilizes a parallel memory interface and is organized as 256M x 8 bits, providing efficient data access for embedded systems.
This memory IC operates over a supply voltage range of 2.7V to 3.6V, with a nominal voltage of 3.3V, making it suitable for standard logic-level systems. It features a write cycle time of 25 ns, enabling fast programming operations. The device is specified for an industrial temperature range of -40°C to 85°C, ensuring reliable performance in harsh environments.
The S34ML02G100BHI000 is housed in a 63-ball BGA package, offering a compact footprint for space-constrained designs. It is ideal for use in applications requiring high-capacity non-volatile memory, such as data logging, firmware storage, and code shadowing in embedded systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2 Gbit.
256M x 8.
2.7V to 3.6V, with a nominal voltage of 3.3V.
-40°C to 85°C.
25 ns.