| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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13,217 pcs
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13217 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
5,114 pcs
|
5114 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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This Cypress Semiconductor S34ML01G100BHI000 is a 1 Gigabit SLC NAND Flash memory device designed for embedded applications. It offers a parallel interface and a memory organization of 128M x 8.
The device operates within a supply voltage range of 2.7V to 3.6V, with a maximum supply current of 30mA. Key performance specifications include a fast 25ns access time and a program time of 200µs typical. Block erase time is 2.0ms typical for this specific part.
With a rated operating temperature range of -40°C to 85°C, this NAND Flash memory is suitable for industrial environments. It boasts a reliability of 100,000 program/erase cycles and 10 years of data retention. The component is supplied in a compact 63-BGA (11x9) package, designed for surface mounting.
Compliance includes RoHS3, Lead Free, and Low Halogen standards. The Moisture Sensitivity Level (MSL) is 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The memory size of the S34ML01G100BHI000 is 1 Gbit.
The memory type of the S34ML01G100BHI000 is NAND.
The interface type of the S34ML01G100BHI000 is Parallel.
The operating voltage range for the S34ML01G100BHI000 is 2.7V to 3.6V.
The operating temperature range for the S34ML01G100BHI000 is -40°C to 85°C.
The S34ML01G100BHI000 is supplied in a 63-BGA package.
The typical program/erase cycle endurance is 100,000 cycles.