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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies S29JL064J70TFI003 is a 64-Mbit (8M x 8-Bit / 4M x 16-Bit) parallel NOR Flash memory designed for high-performance applications. It operates from a 2.7V to 3.6V supply voltage, offering a fast access time of 70 ns.
This Flash memory supports simultaneous read and write operations, allowing data to be continuously read from one bank while erase or program functions are executed in another bank, with zero latency between operations. It features a flexible bank architecture and boot sectors, manufactured on a 0.11 µm process technology.
The device is housed in a 48-TSOP package and is suitable for surface mounting. It operates within a temperature range of -40°C to 85°C (TA). The memory offers a cycling endurance of 1 million cycles per sector and data retention of 20 years typical.
Key architectural advantages include simultaneous read/write operations, flexible bank architecture, boot sectors, and a secured silicon region. It also incorporates zero power operation for reduced consumption during inactive periods.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The S29JL064J70TFI003 has a memory size of 64 Mbit.
The operating voltage range is 2.7V to 3.6V.
The access time is 70 ns.
It is available in a 48-TSOP surface-mount package.
The operating temperature range is -40°C to +85°C.
It is organized as 8M x 8 or 4M x 16.
Yes, it supports simultaneous read and write operations with zero latency.